2SD1804T-E

Single Bipolar Transistors Overview

The onsemi 2SD1804T-E is an NPN Epitaxial Planar Silicon Transistor designed for high-current switching applications. It features a maximum collector current of 8A and a collector-to-emitter voltage rating of 50V. The device utilizes a TP-FA package with four pins, where the collector connects to both pin 2 and pin 4. Key electrical characteristics include a DC current gain (hFE) ranging from 70 to 400 depending on the sub-grade, a low collector-to-emitter saturation voltage, and fast switching times.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High current capacity combined with high transition frequency
• Excellent linearity of DC current gain across operating ranges
• Fast switching time suitable for high-speed inverter circuits

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify that the component matches the SANYO Electric Co., Ltd. datasheet specifications, as the manufacturer was acquired by onsemi. Confirm the specific hFE binning grade required for your circuit design, as performance varies between Q, R, S, and T sub-grades. Ensure the thermal management strategy accounts for the absolute maximum ratings provided in the official documentation.

Single Bipolar Transistors Selection Notes

Select this transistor when designing circuits requiring robust high-current switching capabilities with minimal saturation losses. Consider the specific hFE sub-grade necessary for your base drive requirements, as the gain range spans from 70 to 400. Evaluate the thermal dissipation needs based on the ambient temperature and mounting conditions specified in the datasheet curves.

Single Bipolar Transistors Part Context

This component belongs to the 2SB1204/2SD1804 series of PNP/NPN Epitaxial Planar Silicon Transistors originally manufactured by SANYO Electric Co., Ltd. Semiconductor Company. The series is engineered for compact designs due to its small and slim package dimensions, facilitating smaller applied sets in modern electronic equipment.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series or equivalent high-current NPN transistors. Verify that any substitute meets the 50V collector-to-emitter voltage and 8A current requirements.