2SD1815S-H

Single Bipolar Transistors Overview

The onsemi 2SD1815S-H is a single NPN silicon epitaxial planar bipolar junction transistor housed in a TP (TO-251) surface-mount package. It supports a maximum collector current of 3 A and a collector-emitter breakdown voltage of 100 V. The device features a gain-bandwidth product of 180 MHz, ensuring high-frequency performance suitable for switching applications. Electrical characteristics include a collector cutoff current of 1 µA and a DC current gain ranging from 40 to 400 depending on the operating rank. Thermal management allows for a maximum power dissipation of 1 W at 25°C case temperature, with an extended junction temperature rating up to 150°C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• Excellent linearity of hFE across operating ranges
• High transition frequency (fT) supporting fast switching times
• Halogen-free compliance for environmental safety

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'H' to confirm halogen-free status, as the datasheet distinguishes between standard and halogen-free variants within the same package type. Confirm the package designation matches the required footprint, as this model utilizes the TP configuration. Ensure compatibility with RoHS directives if applicable to the target assembly process. Cross-reference the manufacturer's latest documentation for any potential obsolescence notices or material declaration updates prior to finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-current switching capabilities combined with low saturation voltage to minimize power loss. The 100V collector-emitter rating provides adequate headroom for moderate voltage applications. Consider the thermal derating curves provided in the datasheet to ensure reliable operation under varying ambient temperatures. The availability of different hFE ranks allows for selection based on specific gain requirements for linear or saturated switching modes.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1815 series manufactured by onsemi, designed as a complementary pair to the 2SB1215 PNP transistor. Both devices share similar electrical characteristics and are intended for use in general-purpose high-current switching applications. The series is characterized by its small-sized package, which facilitates the miniaturization of electronic sets. The 2SD1815S-H specifically denotes the NPN variant in the TO-251 package with halogen-free compliance.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1215 as the complementary PNP counterpart within the same family. No direct substitute part numbers are listed in the official documentation.