2SD1816T-H

Single Bipolar Transistors Overview

The onsemi 2SD1816T-H is a single NPN bipolar junction transistor designed for high-current switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 4 A, with a peak pulse current capability of 8 A. The device offers a low collector-to-emitter saturation voltage and fast switching times, including a turn-on time of 100 ns and fall time of 50 ns. Packaged in the slim DPAK (TP-FA) form factor, it provides a gain-bandwidth product of 180 MHz and supports operation up to a junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• Fast switching characteristics suitable for high-speed inverters
• Small and slim package design facilitating compact set construction
• High transition frequency and good linearity of DC current gain

Single Bipolar Transistors Applications

• Relay drivers
• High speed inverters
• Converters
• General high current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the required packaging format. The 'T' suffix indicates tape and reel shipping, while 'S' denotes bag packing. Ensure the 'H' suffix is selected if halogen-free compliance is mandatory for the assembly process. Confirm the DPAK TP-FA package variant matches the intended PCB footprint requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor is required for circuits demanding 100 V blocking capability and 4 A load current. The DPAK package is appropriate for applications where thermal dissipation needs to be managed via board copper area. Consider the hFE ranking requirements based on base drive availability, as gain varies significantly between light and heavy load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216/2SD1816 complementary pair series from onsemi. The 2SD1816 serves as the NPN counterpart to the 2SB1216 PNP transistor. Both devices share identical electrical ratings and physical dimensions, allowing for symmetrical push-pull configurations in amplifier or driver stages within power electronics systems.

Single Bipolar Transistors Replacement Considerations

• 2SD1816T-TL-E
• 2SD1816S-H

Single Bipolar Transistors FAQ

What is the maximum collector current rating for the 2SD1816?

The continuous collector current (IC) is rated at 4 A, with a peak pulse current (ICP) capability of 8 A.

Does the 2SD1816T-H come in a surface-mount package?

Yes, the T-H suffix indicates the device is available in the DPAK (TP-FA) surface-mount package.

What is the typical fall time for this transistor?

The specified fall time (tf) is 50 ns under standard test conditions.