2SD1819GRL

Single Bipolar Transistors Overview

The Panasonic 2SD1819GRL is a silicon NPN epitaxial planar transistor designed for general amplification. It features an SMini3-F2 package with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device offers a high forward current transfer ratio (hFE) ranging from 160 to 460, depending on the rank classification. Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of 0.1 V to 0.3 V at IC = 100 mA, and a transition frequency (fT) of 150 MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) for efficient signal amplification
• Low collector-emitter saturation voltage (VCE(sat)) to minimize power loss
• SMini3-F2 surface-mount package enabling equipment downsizing and automated tape/magazine insertion

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, S, or No Rank) required for your circuit design, as performance varies by classification. Confirm the latest product lifecycle status via official channels, as maintenance or discontinuation notices may apply. Ensure compliance with RoHS directives and verify that the application falls within standard electronic equipment usage rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact surface-mount packaging and moderate gain. The complementary PNP transistor is the 2SB1218G. Consider the hFE rank requirements carefully; higher ranks offer greater gain but may have tighter tolerances. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding junction temperature and peak collector current limits.

Single Bipolar Transistors Part Context

The 2SD1819G belongs to Panasonic's lineup of small-signal NPN transistors utilizing silicon epitaxial planar technology. It is part of a family designed for general-purpose amplification in consumer and industrial electronics. The device is housed in the SMini3-F2 package, which facilitates automated assembly processes through tape and magazine packing options.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1218G as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.