2SD1820A0L

Single Bipolar Transistors Overview

The Panasonic 2SD1820A is a silicon NPN epitaxial planar transistor designed for general amplification. It features an SMini3-G1 package with a collector-emitter voltage of 50 V and a continuous collector current of 500 mA. The device exhibits a low collector-emitter saturation voltage, typically ranging from 0.35 V to 0.60 V at specified currents. Electrical characteristics include a forward current transfer ratio (hFE) between 40 and 340 depending on the rank, and a transition frequency of 200 MHz.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• S-Mini type package enabling equipment downsizing and automatic insertion via tape packing

Single Bipolar Transistors Applications

• General amplification in electronic circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, S, or No-rank) required for your application, as performance varies by classification. Confirm the latest product status, including maintenance or discontinuation plans, directly through official Panasonic channels before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact surface-mount solutions with standard amplification capabilities. Ensure the design accommodates the 150 mW power dissipation limit and operates within the specified junction temperature range. Verify that the complementary 2SB1219A PNP transistor meets requirements if a push-pull configuration is needed.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of small signal bipolar transistors. It is specifically engineered as the NPN counterpart to the 2SB1219A PNP transistor, facilitating matched pairs for audio and signal processing stages. The SMini3-G1 package represents a miniaturized footprint suitable for modern high-density printed circuit board layouts.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1219A as the complementary PNP transistor. Direct replacement requires verifying pinout compatibility and ensuring the substitute meets the 50 V collector-emitter voltage and 500 mA current specifications.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD1820A?

The device is classified into four ranks based on forward current transfer ratio: Rank Q (85 to 170), Rank R (120 to 240), Rank S (170 to 340), and No-rank (85 to 340).

What is the maximum peak collector current?

The absolute maximum rating for peak collector current (ICP) is 1 A.

How does ambient temperature affect power dissipation?

Collector power dissipation decreases as ambient temperature increases beyond 25°C, following the derating curves provided in the electrical characteristics section.