Single Bipolar Transistors 2SD1851-TB-E product image

2SD1851-TB-E

$0.09
  • Description:PNP EPITAXIAL PLANAR SILICON
  • Series:*

SKU:9d6c0793a0dc Category: Brand:

  
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2SD1851-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is PNP EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1851-TB-E

  • Description:PNP EPITAXIAL PLANAR SILICON
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1851-TB-E

2SD1851-TB-E

Single Bipolar Transistors Overview

The 2SD1851-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It features a Darlington connection and is housed in an ultrasmall package. Key electrical ratings include a collector-to-emitter voltage of 50 V, a collector current of 200 mA, and a collector dissipation of 200 mW at 25°C ambient temperature. The device exhibits high DC current gain, with typical values ranging from 3000 to 5000 depending on the operating current.

Single Bipolar Transistors Feature Summary

  • Darlington connection structure for high current amplification
  • Ultrasmall-sized package design enabling compact equipment construction
  • High DC current gain characteristics

Single Bipolar Transistors Applications

  • Audio frequency amplifier circuits
  • Solenoid drivers
  • LED drivers

Single Bipolar Transistors Procurement Notes

Verify the component against the official SANYO Semiconductor datasheet EN2553B. Confirm that the marking code matches 'XY' for the 2SD1851 variant. Ensure the ordering suffix '-TB-E' aligns with the specific packaging requirements defined in the manufacturer's documentation before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a small form factor is required alongside high current gain capabilities. The Darlington configuration makes it suitable for applications needing significant amplification within limited space constraints. Verify that the 200 mA continuous collector current rating meets the specific load requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1234/2SD1851 series of PNP/NPN epitaxial planar silicon transistors produced by SANYO Semiconductor. The series is specifically engineered for driver applications, offering complementary performance between the PNP and NPN variants within the same ultrasmall package footprint.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for verified substitute part numbers. Cross-reference specifications such as voltage ratings, current capacity, and package dimensions to ensure compatibility with existing circuit designs.

2SD1851-TB-E2SD1851-TB-E
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