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2SD1851-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is PNP EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The 2SD1851-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It features a Darlington connection and is housed in an ultrasmall package. Key electrical ratings include a collector-to-emitter voltage of 50 V, a collector current of 200 mA, and a collector dissipation of 200 mW at 25°C ambient temperature. The device exhibits high DC current gain, with typical values ranging from 3000 to 5000 depending on the operating current.
Verify the component against the official SANYO Semiconductor datasheet EN2553B. Confirm that the marking code matches 'XY' for the 2SD1851 variant. Ensure the ordering suffix '-TB-E' aligns with the specific packaging requirements defined in the manufacturer's documentation before finalizing procurement.
Select this component when a small form factor is required alongside high current gain capabilities. The Darlington configuration makes it suitable for applications needing significant amplification within limited space constraints. Verify that the 200 mA continuous collector current rating meets the specific load requirements of the target circuit design.
This part belongs to the 2SB1234/2SD1851 series of PNP/NPN epitaxial planar silicon transistors produced by SANYO Semiconductor. The series is specifically engineered for driver applications, offering complementary performance between the PNP and NPN variants within the same ultrasmall package footprint.
Consult the official datasheet for verified substitute part numbers. Cross-reference specifications such as voltage ratings, current capacity, and package dimensions to ensure compatibility with existing circuit designs.
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