2SD1864TV2Q

Single Bipolar Transistors Overview

The 2SD1864TV2Q is an NPN silicon epitaxial planar power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 3A. The device exhibits a typical low collector-emitter saturation voltage of 0.5V at a collector current of 2A with a base current of 0.2A. It offers a DC current transfer ratio ranging from 120 to 390 depending on the specific bin, ensuring efficient drive requirements. The transition frequency reaches up to 90MHz, supporting high-speed operation.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for reduced power loss during conduction.
• Designed to complement the 2SB1243 PNP transistor for push-pull configurations.
• High DC current gain providing efficient base drive requirements.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Audio amplifier output stages
• Complementary pairs with 2SB1243

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix TV2 confirms the 2500-piece tape and reel packaging configuration. Ensure the hFE bin code (R or Q) matches the required gain range for your specific circuit design. Confirm the RoHS compliance status if environmental regulations apply to your manufacturing process. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a 50V NPN transistor with 3A current handling is required. Consider the hFE classification based on the necessary base drive current for your application. Verify that the thermal management strategy accommodates the specified power dissipation limits. Ensure the operating junction temperature remains within the safe operating area defined in the datasheet curves.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of small-signal power transistors utilizing epitaxial planar technology. It serves as the NPN counterpart to the 2SB1243, facilitating balanced complementary designs. The ATV package provides a compact footprint suitable for surface-mount assembly. This series targets cost-effective solutions for consumer electronics and industrial control systems requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

The 2SB1243 is officially documented as the complementary PNP partner. No other direct substitute part numbers are listed in the provided documentation. Verify pinout compatibility and electrical parameters before substituting with generic equivalents.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 50V.

How is the hFE gain classified?

The hFE values are classified into two bins: R (180 to 390) and Q (120 to 270).

What is the typical saturation voltage under heavy load?

The typical VCE(sat) is 0.5V when measured at IC/IB = 2A / 0.2A.