SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SD1898T100P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 1A MPT3. Review the specifications below when checking this part for your BOM.
The ROHM Semiconductor 2SD1898T100P is a middle power NPN silicon transistor housed in an SOT-89 (MPT3) surface-mount package. It supports a collector-emitter voltage of 80V and a continuous collector current of 1A. The device features a typical saturation voltage of 150mV at IC/IB=500mA/50mA, with a DC current gain range of 82 to 390 depending on the hFE rank. Maximum power dissipation is rated at 0.5W per terminal on a reference land or 2.0W on a ceramic board.
Verify the specific ordering suffix against the official datasheet to confirm the exact packaging configuration and tape width. Confirm that the component meets RoHS compliance standards required for your assembly process. Check the supply status carefully as this part may be designated as not recommended for new designs by the manufacturer.
Select this component when an 80V NPN transistor with 1A current handling is required in a compact SOT-89 footprint. Ensure the thermal design accommodates the specified power dissipation limits under your operating conditions. Verify that the hFE bin selection matches the gain requirements of your target circuit design.
This transistor belongs to ROHM's middle power bipolar transistor series designed for surface-mount assembly. It serves as the NPN counterpart to complementary PNP types like the 2SB1260. The MPT3 package provides a balance between power handling and board space efficiency for standard electronic equipment.
Consult the official datasheet for direct pin-compatible substitutes. Verify that any alternative component maintains identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB layout.
The absolute maximum collector-base voltage (VCBO) is rated at 120V.
Power dissipation is rated at 0.5W when each terminal is mounted on a reference land, and increases to 2.0W when mounted on a ceramic board.
No, the datasheet specifies it for low frequency output amplifier applications, and its transition frequency is limited to approximately 100MHz.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.