Single Bipolar Transistors 2SD1898T100P product image

2SD1898T100P

$0.88
  • Description:TRANS NPN 80V 1A MPT3
  • Series:-

SKU:8cc7b345b01a Category: Brand:

  
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2SD1898T100P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 1A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1898T100P

  • Description:TRANS NPN 80V 1A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 3V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1898T100P

2SD1898T100P

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD1898T100P is a middle power NPN silicon transistor housed in an SOT-89 (MPT3) surface-mount package. It supports a collector-emitter voltage of 80V and a continuous collector current of 1A. The device features a typical saturation voltage of 150mV at IC/IB=500mA/50mA, with a DC current gain range of 82 to 390 depending on the hFE rank. Maximum power dissipation is rated at 0.5W per terminal on a reference land or 2.0W on a ceramic board.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching performance
  • High breakdown voltage capability suitable for medium-power applications
  • Complementary PNP type available within the same product family

Single Bipolar Transistors Applications

  • Low frequency output amplifier circuits
  • General purpose power switching applications
  • Driver stages in consumer electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm the exact packaging configuration and tape width. Confirm that the component meets RoHS compliance standards required for your assembly process. Check the supply status carefully as this part may be designated as not recommended for new designs by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when an 80V NPN transistor with 1A current handling is required in a compact SOT-89 footprint. Ensure the thermal design accommodates the specified power dissipation limits under your operating conditions. Verify that the hFE bin selection matches the gain requirements of your target circuit design.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's middle power bipolar transistor series designed for surface-mount assembly. It serves as the NPN counterpart to complementary PNP types like the 2SB1260. The MPT3 package provides a balance between power handling and board space efficiency for standard electronic equipment.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for direct pin-compatible substitutes. Verify that any alternative component maintains identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB layout.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at 120V.

How does the power dissipation change based on mounting?

Power dissipation is rated at 0.5W when each terminal is mounted on a reference land, and increases to 2.0W when mounted on a ceramic board.

Is this component suitable for high-frequency RF applications?

No, the datasheet specifies it for low frequency output amplifier applications, and its transition frequency is limited to approximately 100MHz.

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