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2SD1898T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 1A MPT3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1898T100Q
- Description：TRANS NPN 80V 1A MPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 500mA, 3V
- Power - Max：2 W
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：MPT3
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1898T100Q
Single Bipolar Transistors Overview
The 2SD1898T100Q is an NPN epitaxial planar silicon power transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A. The device offers low saturation voltage and high hFE linearity, with a maximum power dissipation of 500 mW. It operates at a maximum junction temperature of +150 °C and is supplied in the SOT-89 surface-mount package.
Single Bipolar Transistors Feature Summary
- High breakdown voltage capability for robust circuit operation
- Optimized for low saturation voltage to improve efficiency
- Linear current gain characteristics across operating ranges
Single Bipolar Transistors Applications
- General-purpose power switching circuits
- Driver stages in audio amplifiers
- Low-voltage regulator implementations
Single Bipolar Transistors Procurement Notes
Verify the specific suffix T100Q against official ROHM documentation to confirm packaging and tape specifications. Confirm RoHS compliance status directly from the manufacturer datasheet before integration. Ensure design reviews account for the component's thermal management requirements within the specified package constraints.
Single Bipolar Transistors Selection Notes
Select this component for applications requiring moderate current handling with high voltage tolerance. Compare its saturation voltage and gain linearity against alternatives like the 2SB1260 pair. Evaluate thermal performance based on the 500 mW dissipation limit in the target PCB layout environment.
Single Bipolar Transistors Part Context
This part belongs to ROHM's discrete bipolar transistor portfolio, designed for surface-mount assembly. It complements complementary PNP devices such as the 2SB1260. The technology utilizes epitaxial planar processes to ensure reliability and consistent electrical parameters for general electronic equipment.
Single Bipolar Transistors Replacement Considerations
Official substitutes include the 2SD1898T100R. Verify pinout compatibility and electrical parameter equivalence with the original datasheet before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
