2SD1898T100R

Single Bipolar Transistors Overview

The 2SD1898T100R is an NPN silicon power transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. The device is designed for surface mount applications, utilizing the SOT-89 package configuration. Key electrical characteristics include low saturation voltage and high hFE linearity, making it suitable for driver and switching circuits.

Single Bipolar Transistors Feature Summary

• High collector-emitter breakdown voltage rated at 80V
• Continuous DC collector current capability of 1A
• Optimized for low collector-emitter saturation voltage
• Maintains good hFE linearity across operating ranges

Single Bipolar Transistors Applications

• General purpose driver circuits
• Low voltage switching applications
• Complementary pairing with specific PNP transistors

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Check for end-of-life notifications as availability may be restricted. Ensure proper handling procedures for surface mount components during assembly.

Single Bipolar Transistors Selection Notes

Evaluate thermal management requirements for the SOT-89 package. Consider complementary PNP devices for push-pull configurations. Verify voltage margins against circuit peak loads. Assess gain linearity needs for analog signal processing tasks.

Single Bipolar Transistors Part Context

This component belongs to ROHM's discrete transistor portfolio, specifically engineered for power amplification and switching roles. The 2SD series typically targets consumer electronics and industrial control systems requiring reliable NPN performance in compact form factors.

Single Bipolar Transistors Replacement Considerations

Official documentation indicates this part complements the 2SB1260, 2SB1241, and 2SB1181 PNP transistors. Cross-reference pinouts and thermal characteristics when substituting with equivalent 80V 1A NPN devices from other manufacturers.