SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SD1913R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is NPN SILICON TRANSISTOR. Review the specifications below when checking this part for your BOM.
The Sanyo 2SD1913R is a single NPN silicon power bipolar junction transistor designed for low-frequency power amplifier applications. It features a maximum collector current of 3A and a collector-emitter breakdown voltage of 60V. The device utilizes the MBIT process to achieve a wide Admissible Operating Area (ASO). It is housed in a three-pin TO-220ML plastic/epoxy package, suitable for general power amplification tasks requiring robust thermal and electrical performance.
Verify the component authenticity by checking for original Sanyo markings and packaging integrity. Ensure the TO-220ML package matches the required thermal dissipation specifications for the target application. Confirm that the NPN configuration aligns with the circuit design requirements before integration.
Select this component when a 3A continuous collector current and 60V voltage rating are required for power amplification. The wide ASO makes it suitable for linear operation in amplifier stages. Consider the TO-220ML package for adequate heat sinking capabilities in high-power scenarios.
This part belongs to the Sanyo single bipolar transistor family, specifically engineered for power handling. The 'R' suffix typically indicates a specific tape-and-reel packaging variant or manufacturing revision, though functional characteristics remain consistent with the standard 2SD1913 specification for power amplifier use.
Direct substitutes should match the 3A current, 60V voltage, and NPN polarity. Verify pinout compatibility for TO-220ML packages. Consult manufacturer cross-reference lists for equivalent parts with identical thermal and electrical ratings.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.