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2SD1949T106Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.5A UMT3. Review the specifications below when checking this part for your BOM.
The 2SD1949T106Q is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA. The device features a DC current gain (hFE) ranging from 120 to 390, with a transition frequency of 250 MHz. Power dissipation is rated at 200 mW in an SC-70-3 surface-mount package. It supports a maximum operating temperature of +150°C.
Verify the specific suffix T106Q against official ROHM documentation to confirm packaging and tape specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the datasheet for exact thermal resistance values relevant to your PCB layout before finalizing procurement orders.
Select this component when a compact NPN transistor with moderate current handling and high gain is required. The 50V rating suits low-voltage logic interfaces. Compare the 250 MHz transition frequency against application bandwidth needs. Consider the SC-70-3 package dimensions for board space optimization relative to larger SOT packages.
This part belongs to the 2SD1949 series of small-signal NPN transistors. It is designed for general-purpose use in portable devices where size and power efficiency are critical. The technology utilizes standard silicon planar processes to achieve reliable performance in consumer electronic applications.
Consult official substitution guides for equivalent NPN transistors in SC-70-3 packages. Verify pinout compatibility and electrical parameter overlaps before replacing.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.