Single Bipolar Transistors 2SD1963T100Q product image

2SD1963T100Q

  • Description:TRANS NPN 20V 3A MPT3
  • Series:-

SKU:41a713658b2c Category: Brand:

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2SD1963T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 20V 3A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1963T100Q

  • Description:TRANS NPN 20V 3A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 25mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 6V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1963T100Q

2SD1963T100Q

Single Bipolar Transistors Overview

The 2SD1963T100Q is an NPN silicon power transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 3 A. The device operates in a single configuration within a surface-mount SOT-89-3 package. Key electrical parameters include a maximum DC current gain (hFE) of 120 at 100 mA and 2 V, and a typical saturation voltage (VCE(sat)) of -0.45 V at IC/IB = -1.5A/-0.15A. The component supports a maximum operating temperature of +150°C and has a power dissipation rating of 1 W.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching performance
  • Excellent DC current gain characteristics
  • Complements the 2SB1308 PNP counterpart

Single Bipolar Transistors Applications

  • General-purpose power switching applications
  • Driver circuits requiring high current capability
  • Complementary pairs with 2SB1308

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T100Q against the official ROHM datasheet to confirm packaging and tape-and-reel specifications. Ensure the procurement source provides valid RoHS compliance documentation. Confirm that the component status is active for new designs, as some related ROHM parts may carry NRND status. Cross-reference the manufacturer part number with authorized distributor listings to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V, 3 A NPN power transistor is required in an SOT-89-3 package. It is suitable for designs needing low saturation voltage and high current gain. Consider the complementary 2SB1308 for push-pull configurations. Verify thermal management requirements given the 1 W power dissipation limit in the specified package.

Single Bipolar Transistors Part Context

The 2SD1963T100Q belongs to ROHM's line of bipolar junction transistors designed for power applications. It is part of a family that includes complementary PNP devices like the 2SB1308. The T100Q suffix typically denotes the reel packaging format used for surface-mount assembly. This series targets general-purpose switching and amplification tasks in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2SB1308 is documented as a complementary part. No direct substitute part numbers are provided in the available data.

2SD1963T100Q2SD1963T100Q

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