2SD1991A0A

Single Bipolar Transistors Overview

The Panasonic 2SD1991A0A is a silicon NPN epitaxial planar transistor designed for general amplification, complementary to the 2SB1320A. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a high forward current transfer ratio (hFE) ranging from 160 to 460 depending on the rank, and a low collector-emitter saturation voltage of 0.3 V maximum at full load. Packaged in an MT-1-A1 configuration, it supports a peak collector current of 200 mA and a transition frequency of 150 MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) for efficient signal amplification
• Low collector-emitter saturation voltage (VCE(sat)) to minimize power loss
• Complementary pairing capability with the 2SB1320A PNP transistor

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your application, as the component is classified into Q, R, or S ranks based on gain levels. Confirm the package type matches the MT-1-A1 specification during integration. Check the manufacturer's lifecycle status page for availability updates, as this component may be subject to maintenance or discontinuation phases.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN amplifier requires a balance of moderate voltage handling and high current gain. Ensure the design accounts for the 400 mW power dissipation limit at 25°C ambient temperature. Consider the complementary 2SB1320A if a push-pull configuration is needed. Verify that the operating environment remains within the specified -55°C to +150°C storage range.

Single Bipolar Transistors Part Context

This part belongs to Panasonic's lineup of silicon NPN epitaxial planar transistors intended for general-purpose electronic applications. It serves as a standard discrete semiconductor solution for consumer and industrial electronics where reliable amplification is required without specialized high-frequency or high-power constraints.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SB1320A as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 V.

How is the forward current transfer ratio (hFE) classified?

The hFE is divided into three ranks: Rank Q (160–260), Rank R (210–340), and Rank S (290–460). Products without a specific rank marking cover the full 160–460 range.

What is the transition frequency of this transistor?

The transition frequency (fT) is 150 MHz under conditions of VCB = 10 V and IE = -2 mA.