2SD19960RA

$0.11

Description：TRANS NPN 20V 0.5A MT-1-A1
Series：-

SKU:e5d61cad4ad5 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD19960RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 20V 0.5A MT-1-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD19960RA

Description：TRANS NPN 20V 0.5A MT-1-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：20 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 500mA, 2V
Power - Max：600 mW
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：3-SIP
Supplier Device Package：MT-1-A1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD19960RA

2SD19960RA

Single Bipolar Transistors Overview

The Panasonic 2SD1996 is a silicon NPN epitaxial planar transistor designed for low-voltage output amplification, muting circuits, and DC-DC converters. It features a MT-1-A1 package with absolute maximum ratings of 20V collector-emitter voltage (VCEO), 25V collector-base voltage (VCBO), and 0.5A continuous collector current (IC). The device offers a high forward current transfer ratio (hFE) ranging from 200 to 800 depending on the rank, and a low ON resistance (Ron) of approximately 1.0Ω.

Single Bipolar Transistors Feature Summary

Low collector-emitter saturation voltage VCE(sat)
Low ON resistance Ron
High forward current transfer ratio hFE

Single Bipolar Transistors Applications

Low-voltage output amplification
Muting circuits
DC-DC converter

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'RA' against official documentation to confirm pinout or electrical ranking variations. Confirm RoHS compliance status as indicated in the datasheet. Check the manufacturer's lifecycle page for maintenance or discontinuation status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring low saturation voltage and high gain at low currents. Ensure the operating collector current remains within the 0.5A limit and that the junction temperature does not exceed 150°C. Consider the available hFE ranks (R, S, T) if specific gain thresholds are required for the circuit design.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1996 series of small-signal NPN transistors. It utilizes an epitaxial planar construction and is housed in the MT-1-A1 package. The device is compliant with the RoHS Directive (EU 2002/95/EC) and is intended for general electronic equipment applications.