2SD2012

Single Bipolar Transistors Overview

The STMicroelectronics 2SD2012 is a silicon NPN power transistor housed in a TO-220F insulated package. It features high DC current gain and low saturation voltage, making it suitable for general-purpose power amplifiers and switching applications. Key electrical parameters include a collector-emitter voltage of 60 V, a continuous collector current of 3 A, and total dissipation of 25 W at 25°C case temperature. The device offers an insulation withstand voltage of 1500 V RMS from all three leads to the external heatsink.

Single Bipolar Transistors Feature Summary

• Insulated package design for easy mounting
• High DC current gain characteristics
• Low saturation voltage performance

Single Bipolar Transistors Applications

• General purpose power amplifiers
• General purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm package type and insulation ratings. Ensure thermal management meets the specified junction-to-case resistance requirements. Confirm that the application voltage and current limits remain within the absolute maximum ratings defined in the manufacturer's documentation.

Single Bipolar Transistors Selection Notes

Select this component when an insulated NPN power transistor is required for linear or switching circuits. The TO-220F package facilitates direct heatsink mounting without additional insulators. Consider the 1500 V isolation rating for safety-critical designs where lead-to-heatsink insulation is necessary.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon NPN power transistors designed for robust performance in audio frequency and switching environments. The TO-220F variant specifically provides built-in electrical isolation between the collector terminal and the mounting hardware, simplifying mechanical assembly in high-voltage applications.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN power transistors offering similar 60 V ratings and TO-220F packages. Verify pinout compatibility and thermal resistance values before substitution. Ensure the alternative device meets the same insulation withstand voltage specifications if isolation is required.

Single Bipolar Transistors FAQ

What is the insulation withstand voltage of the 2SD2012?

The device provides an insulation withstand voltage of 1500 V RMS from all three leads to the external heatsink.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 0.4 V when the collector current is 2 A and the base current is 0.2 A.

Is the 2SD2012 suitable for audio frequency applications?

Yes, the datasheet lists general purpose power amplifiers as a primary application, indicating suitability for audio frequency power amplifier uses.