Single Bipolar Transistors 2SD20670RA product image

2SD20670RA

  • Description:TRANS NPN DARL 100V 2A MT-2-A1
  • Series:-

SKU:8b1f7e3415c5 Category: Brand:

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2SD20670RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 100V 2A MT-2-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD20670RA

  • Description:TRANS NPN DARL 100V 2A MT-2-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8000 @ 1A, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-2-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD20670RA

2SD20670RA

Single Bipolar Transistors Overview

The Panasonic 2SD20670RA is a silicon NPN epitaxial planar transistor featuring a Darlington connection, designed for low-frequency output amplification. It operates with a collector-emitter voltage of 100 V and a continuous collector current of 2 A. The device provides a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank. It dissipates up to 1 W of power at 25°C and supports a peak collector current of 3 A. The component utilizes an MT-2-A1 radial through-hole package.

Single Bipolar Transistors Feature Summary

  • Darlington connection structure providing high forward current transfer ratio
  • High collector-emitter voltage rating suitable for output amplification
  • Large peak collector current capability

Single Bipolar Transistors Applications

  • Low-frequency output amplification circuits
  • General electronic equipment
  • Household appliances
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your design, as gain varies significantly between classifications. Confirm that the MT-2-A1 radial lead form matches your PCB layout. Check the latest Panasonic lifecycle status, as this product may be discontinued or in maintenance mode. Ensure compliance with RoHS directives if applicable to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is necessary without excessive base drive current. The Darlington configuration simplifies driver circuitry but results in higher saturation voltages compared to single transistors. Consider the thermal management requirements for the 1 W dissipation limit. Verify that the 100 V breakdown voltage meets the maximum operating conditions of the target application.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2067 series of silicon NPN transistors manufactured by Panasonic Industry. It is specifically engineered for general-purpose low-frequency amplification tasks. The MT-2-A1 package is a standard radial through-hole format commonly used in legacy and industrial designs. The series emphasizes high gain and robust voltage handling within a compact axial-style leaded footprint.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing with other manufacturers requires careful validation of pinout compatibility, absolute maximum ratings, and electrical characteristics such as hFE ranges and saturation voltages.

2SD20670RA2SD20670RA

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