2SD2106-E

Single Bipolar Transistors Overview

The Renesas Electronics Corporation 2SD2106-E is a Silicon NPN Epitaxial transistor designed for low-frequency power amplifier applications. It operates as a single NPN device with a maximum collector current of 8 A and a collector-emitter voltage rating of 100 V. The component supports a maximum collector-base voltage of 150 V and features a maximum power dissipation of 25 W at 25°C case temperature. It utilizes a TO-220F package suitable for through-hole mounting, ensuring reliable performance in high-power switching and amplification circuits within an operating junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• High current handling capability for robust power amplification
• Integrated thermal management via metal tab construction
• Complementary pairing compatibility for push-pull configurations

Single Bipolar Transistors Applications

• Low frequency power amplifier stages
• Audio output driver circuits
• General purpose power switching

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm exact electrical tolerances and marking codes. Ensure the procurement channel provides traceability to the original manufacturer. Confirm RoHS compliance status and lead-free certification requirements prior to ordering. Validate that the received components match the specified TO-220F package dimensions and pinout configuration.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring moderate power dissipation and high current drive capabilities. Consider the thermal resistance characteristics of the TO-220F package for adequate heat sinking solutions. Evaluate the complementary 2SB1407 pair if symmetrical push-pull operation is required for the application design.

Single Bipolar Transistors Part Context

This part belongs to the broader category of discrete semiconductor devices manufactured by Renesas Electronics. Historically associated with Hitachi Semiconductor operations transferred to Renesas Technology Corporation, these components are widely used in industrial and consumer electronics. The 2SD2106-E specifically addresses needs for reliable NPN power transistors in linear and switching modes.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent NPN power transistors with matching current and voltage ratings. Verify pinout compatibility and thermal performance metrics before implementing any alternative components in existing designs.