2SD2114KT146V

Single Bipolar Transistors Overview

The ROHM 2SD2114KT146V is an NPN silicon epitaxial planar transistor in a SOT-346 (SC-59) surface-mount package. It features high DC current gain with hFE ranging from 820 to 2700, and a minimum emitter-base voltage of 12V. The device supports a collector current of 0.5A and power dissipation of 0.2W at 25°C. Key electrical parameters include a collector-emitter breakdown voltage of 20V, collector-base breakdown voltage of 25V, and a typical saturation voltage of 0.18V at IC/IB = 500mA/20mA.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Elevated emitter-base voltage rating for robust operation
• Low collector-emitter saturation voltage for reduced power loss

Single Bipolar Transistors Applications

• Audio visual equipment
• Office automation equipment
• Communications devices
• Electronic toys

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (V or W) required for your circuit design, as the T146 suffix indicates a taping quantity of 3000 pieces. Confirm that the application remains within standard consumer electronics limits, as the datasheet explicitly excludes medical, transportation, aerospace, and nuclear safety applications due to reliability constraints.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-346 footprint is necessary alongside exceptionally high current gain requirements. The 12V minimum emitter-base voltage provides additional margin against reverse bias stress compared to standard small-signal transistors. Ensure thermal management accommodates the 0.2W power dissipation limit in free air conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2114K series, which shares identical electrical characteristics with the 2SD2144S model. Both are designed as medium-power transistors optimized for general-purpose switching and amplification in space-constrained portable and desktop electronic devices manufactured by ROHM Semiconductor.

Single Bipolar Transistors Replacement Considerations

The 2SD2144S is electrically equivalent to the 2SD2114K and serves as a direct functional substitute. Verify pinout compatibility if substituting between different package codes, although both utilize the SC-59/SMT3 form factor.

Single Bipolar Transistors FAQ

What is the minimum guaranteed emitter-base voltage?

The datasheet specifies a minimum emitter-base voltage (VEBO) of 12V.

How is the DC current gain classified?

The hFE values are classified into two bins: Type V ranges from 820 to 1800, and Type W ranges from 1200 to 2700.

Is this transistor suitable for automotive use?

No, the appendix states these products are not designed for equipment requiring extremely high reliability such as transportation equipment.