2SD2114KT146W

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2114KT146W is an NPN silicon epitaxial planar transistor in the SMT3 (SC-59) surface-mount package. It features a collector-emitter voltage of 20V, a continuous collector current of 0.5A, and a power dissipation of 0.2W. The device offers high DC current gain with a minimum hFE of 820 and a typical value of 1200 for the 'W' grade. Key electrical characteristics include a low collector-emitter saturation voltage of 0.18V at IC/IB = 500mA/20mA, a transition frequency of 350MHz, and a high emitter-base breakdown voltage of 12V.

Single Bipolar Transistors Feature Summary

• High DC current gain with a typical value of 1200
• Low collector-emitter saturation voltage for efficient switching
• High emitter-base breakdown voltage capability

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring high gain
• Audio visual equipment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE binning classification, as the 'W' designation indicates a defined gain range. Confirm the package type matches the required footprint, as the base model may be available in through-hole configurations. Ensure the component meets the intended environmental operating temperature range of -55°C to +150°C for the application.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required in a compact surface-mount form factor. The device is suitable for applications demanding low saturation voltage and high emitter-base voltage tolerance. Consider the thermal constraints of the SMT3 package, which limits power dissipation to 0.2W, making it appropriate for low-to-medium power signal handling rather than high-power amplification.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2114K series of medium-power transistors manufactured by ROHM Semiconductor. The 'T146' suffix denotes tape-and-reel packaging, while 'W' specifies the DC current gain classification. The device utilizes an epitaxial planar structure on silicon substrate, designed for reliability in standard electronic equipment applications.

Single Bipolar Transistors Replacement Considerations

The 2SD2144S is a pin-compatible alternative within the same datasheet offering similar electrical characteristics but potentially in a different package configuration. Verify that any substitute maintains the required hFE range and package dimensions for direct replacement.

Single Bipolar Transistors FAQ

What is the difference between the 2SD2114K and 2SD2144S?

Both are NPN silicon transistors with identical electrical ratings. The primary difference is the package: the 2SD2114K is typically available in the SMT3 surface-mount package, while the 2SD2144S is offered in the SPT through-hole package.

What does the 'W' suffix indicate in the part number?

The 'W' suffix designates the DC current gain (hFE) binning. For the 2SD2114KT146W, the hFE is classified within the range of 1200 to 2700.

What is the maximum collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 0.18V when measured at a collector current of 500mA and a base current of 20mA.