Single Bipolar Transistors 2SD2118TLR product image

2SD2118TLR

$1.07
  • Description:TRANS NPN 20V 5A CPT3
  • Series:-

SKU:07b206162f7e Category: Brand:

  
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2SD2118TLR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 20V 5A CPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2118TLR

  • Description:TRANS NPN 20V 5A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 4A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 2V
  • Power - Max:10 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:CPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD2118TLR

2SD2118TLR

Single Bipolar Transistors Overview

The ROHM 2SD2118TLR is an NPN silicon epitaxial planar transistor designed for strobe flash applications. It features a low collector-emitter saturation voltage of 0.25V typical at IC/IB = 4A/0.1A. The device supports a DC collector current of 5A and a pulse current of 10A, with a collector-emitter breakdown voltage of 20V. Power dissipation reaches 1W on a glass epoxy board or 10W with case mounting. It utilizes the CPT3 (TO-252) surface-mount package.

Single Bipolar Transistors Feature Summary

  • Low VCE(sat) characteristic optimized for high-current switching efficiency.
  • Excellent DC current gain stability across operating ranges.
  • Epitaxial planar structure ensuring robust performance in strobe circuits.

Single Bipolar Transistors Applications

  • Strobe flash driver circuits
  • High-speed switching applications requiring low saturation voltage

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (Q: 120-270 or R: 180-390) required for your design against the ordering suffix. Confirm the CPT3 package dimensions match your PCB land pattern. Ensure thermal management aligns with the specified power dissipation limits for your mounting method.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for minimizing power loss during high-current pulses. Compare against complementary PNP types like the 2SB1386 if a push-pull configuration is needed. Verify that the 20V VCEO rating meets the circuit's maximum voltage requirements.

Single Bipolar Transistors Part Context

This part belongs to a family including the 2SD2097 and 2SD2098, differentiated primarily by their power dissipation capabilities and package variants. The 2SD2118 specifically targets strobe flash drivers, offering a balance of high current handling and low saturation voltage in a compact surface-mount form factor.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible replacements within the same package include the 2SD2097 and 2SD2098. Verify electrical parameters such as VCEO and PC to ensure compatibility with the existing thermal and voltage constraints of the design.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.25V when measured at a collector current of 4A and a base current of 0.1A.

How does the 2SD2118 complement other components?

It is designed to complement PNP transistors such as the 2SB1386, 2SB1412, and 2SB1326 in complementary pairs.

What are the available hFE classifications?

The device is available in two hFE bins: Q (120 to 270) and R (180 to 390).

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