2SD21330RA

Single Bipolar Transistors Overview

The Panasonic 2SD2133 is a silicon NPN epitaxial planar power transistor designed for low-frequency power amplification driver applications. It features an MT-3-A1 surface-mount package with three terminals: emitter, collector, and base. The device supports a maximum collector current of 1 A and a peak collector current of 1.5 A. Key electrical ratings include a collector-emitter voltage of 50 V, a collector-base voltage of 60 V, and a collector power dissipation of 1.5 W at 25°C. The transition frequency reaches 200 MHz, and the junction temperature can operate up to 150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High forward current transfer ratio across multiple gain ranks
• Transition frequency of 200 MHz suitable for low-frequency drivers

Single Bipolar Transistors Applications

• Low-frequency power amplification driver circuits
• General electronic equipment such as office and communications devices
• Household appliances and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your circuit design, as the datasheet defines distinct gain ranges for each classification. Confirm the component lifecycle status on the manufacturer's official website, as this product may be subject to maintenance or discontinuation plans. Ensure that the final specifications match the most recent Product Standards before purchasing.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on the required forward current transfer ratio for your specific application conditions. Consider the thermal management requirements, as the collector power dissipation is rated at 1.5 W without a heat sink. Verify that the operating environment stays within the specified storage and junction temperature limits to ensure reliability.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD series of silicon NPN transistors. It utilizes an epitaxial planar construction process. The device is housed in an MT-3-A1 small outline package, which facilitates downsizing of equipment and allows for automatic insertion through tape packing or magazine packing systems.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.