2SD21340RA

Description：TRANS NPN 150V 1A MT-3-A1
Series：-

SKU:44dc90908335 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD21340RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 150V 1A MT-3-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD21340RA

Description：TRANS NPN 150V 1A MT-3-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：2V @ 50mA, 500mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 150mA, 10V
Power - Max：1.5 W
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：3-SIP
Supplier Device Package：MT-3-A1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD21340RA

2SD21340RA

Single Bipolar Transistors Overview

The Panasonic 2SD2134 is a Silicon NPN epitaxial planar transistor designed for low-frequency driver and high-power amplification applications. It serves as the complementary pair to the 2SB1414 PNP transistor, making it optimal for the driver stage of output amplifiers ranging from 60 W to 100 W. The device operates within an ambient temperature range up to 150 °C junction temperature and utilizes the MT-3-A1 package.

Single Bipolar Transistors Feature Summary

Complementary pairing with the 2SB1414 transistor for optimized amplifier driver stages
High transition frequency (fT) supporting efficient signal processing
Excellent collector current characteristics defined by forward current transfer ratio (hFE)
Designed specifically for low-frequency driver and high-power amplification tasks

Single Bipolar Transistors Applications

Driver stage for 60 W to 100 W output amplifiers
Low-frequency power amplification circuits
General electronic equipment such as office and communications devices

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or R) required for your circuit design, as performance varies between 90–155 and 130–220. Confirm the component lifecycle status on the official Panasonic Semiconductor website, as this part may be subject to maintenance or discontinuation schedules. Ensure compliance with RoHS Directive (EU 2002/95/EC) requirements during procurement.

Single Bipolar Transistors Selection Notes

Select the 2SD2134 when paired with the 2SB1414 for balanced low-frequency amplification. Consider the MT-3-A1 package dimensions for board layout. Evaluate thermal resistance without a heat sink if operating near maximum ambient temperatures. Verify that the application falls within standard general electronics rather than specialized safety-critical systems requiring exceptional reliability.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic Silicon NPN epitaxial planar transistor family. It is engineered for robust performance in audio and power amplification contexts. The datasheet specifies JIS C 7030 measuring methods for electrical characteristics. It is intended for standard applications like household appliances and measuring instruments, excluding aerospace or life-support systems.