Single Bipolar Transistors 2SD21390PA product image

2SD21390PA

  • Description:TRANS NPN 60V 3A MT-4-A1
  • Series:-

SKU:68bab9b3535d Category: Brand:

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2SD21390PA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 60V 3A MT-4-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD21390PA

  • Description:TRANS NPN 60V 3A MT-4-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:800 @ 500mA, 4V
  • Power - Max:2 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-4-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD21390PA

2SD21390PA

Single Bipolar Transistors Overview

The Panasonic 2SD2139 is a silicon NPN triple diffusion planar transistor designed for high-speed switching and high current amplification. It features a collector-emitter voltage (VCEO) of 60 V, a continuous collector current (IC) of 3 A, and a peak collector current (ICP) of 6 A. The device offers a forward current transfer ratio (hFE) ranging from 500 to 2,500 depending on the rank, with a transition frequency (fT) of 50 MHz. It operates within a junction temperature range up to 150 °C and dissipates up to 15 W at 25 °C case temperature.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio hFE
  • Satisfactory linearity of forward current transfer ratio hFE
  • Allows supply with radial taping

Single Bipolar Transistors Applications

  • High-speed switching circuits
  • High current amplification applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official Panasonic Semiconductor website to confirm the exact hFE rank classification (Q, P, or O). Confirm the product lifecycle status as Maintenance/Discontinued before finalizing procurement plans. Ensure compliance with RoHS Directive requirements during integration.

Single Bipolar Transistors Selection Notes

Select this component when high gain linearity and fast switching speeds are required in power amplifier stages. Consider the MT-4-A1 package dimensions for PCB layout constraints. Evaluate thermal management strategies based on the 15 W dissipation rating and safe operating area curves under varying ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic Power Transistors series, specifically utilizing silicon NPN triple diffusion planar technology. It is engineered for robust performance in general electronic equipment, office machinery, and communication devices requiring reliable high-current handling capabilities.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic Semiconductor website for verified substitute part numbers. Cross-reference electrical characteristics such as VCEO, IC, and hFE ranks to ensure functional compatibility without modifying existing circuit designs.

Single Bipolar Transistors FAQ

What are the available hFE rank classifications for the 2SD2139?

The device is classified into three hFE ranks: Rank Q (500 to 1,000), Rank P (800 to 1,500), and Rank O (1,200 to 2,500).

What is the maximum collector power dissipation rating?

The maximum collector power dissipation is rated at 15 W when the case temperature is maintained at 25 °C.

Is the 2SD2139 compliant with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

2SD21390PA2SD21390PA

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