2SD2144STPU

Single Bipolar Transistors Overview

The ROHM 2SD2144STPU is an NPN silicon epitaxial planar transistor in the SPT (SC-72) package. It features a collector-emitter voltage of 20V and a continuous collector current of 0.5A. The device provides a minimum DC current gain (hFE) of 820, with typical values reaching 1200. Key electrical characteristics include a low collector-emitter saturation voltage of 0.18V at IC/IB = 500mA/20mA, a transition frequency of 350MHz, and a high emitter-base breakdown voltage of 12V.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Low collector-emitter saturation voltage to minimize power loss
• High emitter-base voltage rating for robust operation

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring low saturation voltage
• Audio visual equipment
• Office automation equipment

Single Bipolar Transistors Procurement Notes

Verify the specific hFE ranking suffix required for your design, as the datasheet indicates classification into VW (820-1800) and TP (1200-2700) bins. Confirm that the application does not require automotive-grade reliability or radiation hardening, as these products are designed for ordinary electronic equipment. Ensure thermal management aligns with the 0.2W power dissipation limit at 25°C ambient temperature.

Single Bipolar Transistors Selection Notes

Select this component when a medium-power NPN transistor with exceptionally high current gain is needed. The low VCE(sat) makes it suitable for switching loads where minimizing voltage drop is critical. Compare against standard small-signal transistors if higher gain or lower saturation voltage is required. Consider the SC-72 package constraints for PCB layout and thermal performance relative to surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2114K/2SD2144S family of high-current gain medium power transistors manufactured by ROHM Semiconductor. It utilizes an epitaxial planar structure on silicon substrate. The device is intended for general-purpose use in consumer electronics and office equipment, offering a balance of high gain and low saturation characteristics within a compact through-hole compatible package.

Single Bipolar Transistors Replacement Considerations

The 2SD2114K is electrically equivalent and shares the same pinout and package dimensions. Verify that any substitute maintains the required hFE range and VCEO specifications for the specific circuit application.

Single Bipolar Transistors FAQ

What is the maximum emitter-base voltage?

The maximum emitter-base voltage (VEBO) is 12V.

How is the DC current gain classified?

The hFE is classified into two groups: VW (820 to 1800) and TP (1200 to 2700).

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.18V when measured at IC=500mA and IB=20mA.