2SD2170T100

Single Bipolar Transistors Overview

The 2SD2170T100 is a medium power NPN silicon transistor manufactured by ROHM Semiconductor. It features a Darlington configuration designed for high DC current gain applications. The device integrates a Zener diode between the collector and base to provide robust protection against reverse power surges generated by inductive loads. Additional internal components include a resistor between the base and emitter and a built-in damper diode, enhancing stability and reliability in motor and relay drive circuits.

Single Bipolar Transistors Feature Summary

• Built-in Zener diode between collector and base for surge protection
• Darlington connection structure providing high DC current gain
• Integrated base-to-emitter resistor for improved switching stability
• Built-in damper diode to manage inductive load effects

Single Bipolar Transistors Applications

• Motor drive circuits
• Relay driver stages
• Inductive load switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100 corresponds to the required tape and reel packaging quantity when sourcing. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the design accounts for the integrated Zener diode characteristics, as this distinguishes it from standard Darlington transistors without internal protection structures.

Single Bipolar Transistors Selection Notes

Select this component when driving inductive loads such as motors or relays that require inherent overvoltage protection. The integrated Zener diode eliminates the need for external clamping components in many designs. Consider the thermal dissipation capabilities of the package if operating near maximum current limits. Verify that the high current gain matches the control signal requirements of the driving circuitry.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor series specifically engineered for driving inductive loads. The 2SD2170 variant incorporates internal protection features not found in basic Darlington pairs. It is distinct from low-power signal transistors due to its higher current handling and specialized internal diode structures for managing back-EMF from connected loads.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.