2SD2177A0A

Single Bipolar Transistors Overview

The Panasonic 2SD2177A0A is a silicon NPN epitaxial planar transistor designed for low-frequency output amplification. It operates with a collector-emitter voltage of 60 V and a continuous collector current of 2 A, supporting a peak current of 3 A. The device features a low collector-emitter saturation voltage (VCE(sat)) of 0.15 V to 0.30 V at IC = 1 A and IB = 50 mA. It utilizes an MT-2-A1 package and complies with the RoHS Directive.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• Radial taping supply option available

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits

Single Bipolar Transistors Procurement Notes

Verify component status directly via official channels as lifecycle stages may include maintenance or discontinuation. Confirm specific ordering suffixes against manufacturer documentation to ensure correct packaging and ranking specifications before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain and low saturation voltage in low-frequency amplification. Ensure thermal management accommodates the 1 W collector power dissipation rating. Verify that the MT-2-A1 package dimensions align with the target printed circuit board layout.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of silicon NPN transistors. It is specifically engineered for general-purpose low-frequency output amplification tasks within standard electronic equipment such as office machines and measuring instruments.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic resources for verified substitute part numbers. Cross-referencing requires matching absolute maximum ratings and electrical characteristics to ensure functional compatibility.