Single Bipolar Transistors 2SD2206A(T6SEP,F,M product image

2SD2206A(T6SEP,F,M

  • Description:TRANS NPN 120V 2A TO-92MOD
  • Series:-

SKU:9f3f6d445a71 Category: Brand:

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2SD2206A(T6SEP,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2206A(T6SEP,F,M

  • Description:TRANS NPN 120V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1A, 2V
  • Power - Max:900 mW
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD2206A(T6SEP,F,M

2SD2206A(T6SEP,F,M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD2206 is a silicon NPN epitaxial axial type Darlington power transistor designed for micro motor drive, hammer drive, switching, and power amplifier applications. It features a high DC current gain of 2000 (min) at VCE = 2 V and IC = 1 A, with a low collector-emitter saturation voltage of 1.5 V (max) under the same conditions. The device supports a maximum collector current of 2 A continuous or 3 A pulsed, with a collector-emitter breakdown voltage of 100 V. Operating within a junction temperature range up to 150 °C, it dissipates up to 900 mW of power in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • High DC current gain capability
  • Low saturation voltage operation
  • Darlington power transistor configuration

Single Bipolar Transistors Applications

  • Micro Motor Drive
  • Hammer Drive Applications
  • Switching Applications
  • Power Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in documentation. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before implementation. Ensure designs account for absolute maximum ratings to maintain reliability under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain and low saturation voltage in compact packages. Consider the 2A continuous collector current limit and 900mW power dissipation capabilities when designing thermal management solutions. Verify that the TO-92MOD package meets spatial constraints and that the 100V breakdown voltage aligns with circuit requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2206 series of NPN Darlington transistors manufactured by Toshiba Semiconductor and Storage. It utilizes silicon epitaxial technology and is housed in a JEDEC TO-92MOD package. The device is specifically engineered for general electronics applications including computers, office equipment, and home appliances, excluding unintended uses such as medical or aerospace systems.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

2SD2206A(T6SEP,F,M2SD2206A(T6SEP,F,M

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