2SD2206(T6CANO,F,M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD2206 is a silicon NPN epitaxial Darlington power transistor housed in a TO-92MOD package. It features a collector-emitter voltage rating of 100 V, a continuous collector current capacity of 2 A, and a maximum collector power dissipation of 900 mW at 25°C ambient temperature. The device achieves a minimum DC current gain (hFE) of 2000 at IC = 1 A and VCE = 2 V, with a maximum collector-emitter saturation voltage of 1.5 V under identical conditions. Its transition frequency is typically 100 MHz.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing high DC current gain for efficient drive requirements
• Low collector-emitter saturation voltage to minimize conduction losses
• Robust thermal performance supporting junction temperatures up to 150°C

Single Bipolar Transistors Applications

• Micro motor drive circuits
• Hammer drive mechanisms
• General switching applications
• Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free specifications. Confirm package marking details and lot number formatting requirements prior to procurement to ensure alignment with manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical for driving loads directly. Ensure the design accounts for the 900 mW power dissipation limit and derating curves relative to ambient temperature. Verify that the TO-92MOD package dimensions fit the intended PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SD series of NPN epitaxial planar transistors designed for power switching and amplification. It utilizes a Darlington structure to achieve superior current handling compared to standard single-transistor designs within similar physical footprints.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Generic replacements must match the 100V/2A ratings, TO-92MOD package, and Darlington topology to maintain circuit functionality.