Bipolar 2SD2206,T6F(J product image

2SD2206,T6F(J

  • Description:TRANS NPN 100V 2A TO-92MOD
  • Series:-

SKU:da846e23fa35 Category: Brand:

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2SD2206,T6F(J is listed in the Bipolar range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 100V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Bipolar specifications for 2SD2206,T6F(J

  • Description:TRANS NPN 100V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1A, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Bipolar datasheet and documents for 2SD2206,T6F(J

2SD2206,T6F(J

Bipolar Overview

The Toshiba Semiconductor and Storage 2SD2206 is a silicon NPN epitaxial Darlington power transistor housed in a TO-92MOD package. It features a collector-emitter voltage rating of 100 V, a continuous collector current capacity of 2 A, and a maximum collector power dissipation of 900 mW at 25°C ambient temperature. The device provides a minimum DC current gain (hFE) of 2000 at IC = 1 A and VCE = 2 V, with a maximum collector-emitter saturation voltage of 1.5 V under the same conditions. Its transition frequency is typically 100 MHz.

Bipolar Feature Summary

  • Darlington configuration providing high DC current gain for efficient drive requirements
  • Low collector-emitter saturation voltage to minimize conduction losses during switching
  • Robust thermal performance supporting junction temperatures up to 150°C

Bipolar Applications

  • Micro motor drive circuits
  • Hammer drive mechanisms
  • General purpose switching applications
  • Power amplifier stages

Bipolar Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate variations between standard and compliant versions. Confirm package integrity upon receipt, as the TO-92MOD form factor requires specific handling precautions. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing design parameters.

Bipolar Selection Notes

Select this component when high current gain is required to reduce base drive complexity. Ensure the application operates within the 900 mW power dissipation limit at the expected ambient temperature. Verify that the 100 V breakdown voltage exceeds the peak circuit voltages to prevent premature failure.

Bipolar Part Context

This part belongs to Toshiba's lineup of NPN epitaxial planar transistors designed for general electronics. It serves as a high-gain alternative to standard bipolar transistors, suitable for driving loads where base current availability is limited. The TO-92MOD package allows for through-hole mounting on standard printed circuit boards.

Bipolar Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other Darlington transistors from Toshiba or third-party manufacturers that match the 100 V, 2 A, and TO-92MOD specifications while verifying pinout compatibility.

2SD2206,T6F(J2SD2206,T6F(J

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