2SD2211T100Q

Single Bipolar Transistors Overview

The ROHM 2SD2211T100Q is an NPN silicon epitaxial planar power transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 160V and a continuous collector current rating of 1.5A. The device exhibits a transition frequency (fT) of 80MHz and low collector output capacitance, typically 20pF at VCB = 10V. Packaged in the MPT3 form factor with a taping quantity of 1000 units per reel, it serves as a complement to the 2SB1275 and 2SB1236 PNP transistors.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability rated at 160V for robust operation in demanding circuits.
• Low collector output capacitance minimizes switching losses and improves high-frequency performance.
• High transition frequency ensures effective signal amplification and fast switching speeds.
• Designed to directly complement specific PNP counterparts for matched push-pull configurations.

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Complementary pairs with 2SB1275 or 2SB1236 transistors
• Medium-power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the component marking code corresponds to the T100 suffix, which indicates a standard tape-and-reel packaging format containing 1000 pieces. Confirm that the hFE grading matches the required gain band for the specific application circuit. Ensure the MPT3 package dimensions align with the target PCB footprint before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a 160V NPN power transistor is required with moderate current handling capabilities up to 1.5A. The MPT3 package offers a compact solution for surface-mount designs. Consider the complementary 2SB1275 if a matched PNP pair is needed for bridge or push-pull topologies. Evaluate thermal management requirements based on the specified power dissipation limits under various mounting conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2211 series of power transistors manufactured by ROHM Semiconductor. It shares electrical characteristics with the 2SD1918 and 2SD1857A variants within the same datasheet family. The device utilizes silicon epitaxial planar technology to achieve its high-voltage ratings and switching performance specifications.

Single Bipolar Transistors Replacement Considerations

The 2SD1918 and 2SD1857A are electrically similar alternatives within the same product family. For direct pin-compatible replacement in existing designs, verify that the alternative package type matches the original board layout constraints.