2SD2211T100R

Single Bipolar Transistors Overview

The ROHM 2SD2211T100R is an NPN silicon epitaxial planar power transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 160V and a continuous collector current rating of 1.5A. The device offers a transition frequency of 80MHz and low output capacitance, complementing the 2SB1275 and 2SB1236A PNP counterparts. Packaged in the MPT3 (SC-62) surface-mount format with a reel quantity of 1000 units, it supports junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of 160V for robust operation
• Low collector output capacitance for improved switching performance
• High transition frequency suitable for RF and audio stages
• Designed as a direct complement to specific PNP power transistors

Single Bipolar Transistors Applications

• Audio amplifier output stages
• General-purpose power switching circuits
• Complementary pairs with PNP transistors
• High-voltage driver applications

Single Bipolar Transistors Procurement Notes

Verify the complete part number against official ROHM documentation to ensure correct packaging suffix alignment. Confirm that the MPT3 package dimensions match the target PCB footprint. Check current supply status as availability may vary by region. Ensure thermal management requirements are met for the specified power dissipation limits during operation.

Single Bipolar Transistors Selection Notes

Select this component when a 160V NPN transistor is required in a compact SMD package. Consider the complementary 2SB1275 or 2SB1236A if a matched pair is needed for push-pull configurations. Evaluate the 80MHz transition frequency against circuit speed requirements. Verify that the 1.5A current rating exceeds the maximum load current under all operating conditions.

Single Bipolar Transistors Part Context

This device belongs to ROHM's line of high-voltage power transistors intended for consumer electronics and industrial equipment. It utilizes silicon epitaxial planar technology for reliability. The MPT3 package provides a balance between power handling and board space efficiency compared to larger through-hole alternatives.

Single Bipolar Transistors Replacement Considerations

The 2SD1918 and 2SD1857A are electrically similar NPN transistors within the same family. The 2SB1275 and 2SB1236A serve as complementary PNP replacements for paired designs.