2SD22200RA

Description：TRANS NPN DARL 80V 1A MT-3-A1
Series：-

SKU:38b7a1efd1e3 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD22200RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 80V 1A MT-3-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD22200RA

Description：TRANS NPN DARL 80V 1A MT-3-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Box (TB)
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：8000 @ 1A, 10V
Power - Max：1.5 W
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：3-SIP
Supplier Device Package：MT-3-A1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD22200RA

2SD22200RA

Single Bipolar Transistors Overview

The Panasonic 2SD2220 is a silicon NPN triple diffusion planar type Darlington transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 4,000 to 20,000 depending on the rank. The device supports a collector current of 1 A and a peak collector current of 1.5 A. Key voltage ratings include a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V. It operates within a junction temperature range up to 150 °C and is housed in an MT-3-A1 package.

Single Bipolar Transistors Feature Summary

High forward current transfer ratio suitable for driver circuits
Eliminates the need for shunt resistors in driver designs
Triple diffusion planar structure for reliability

Single Bipolar Transistors Applications

Motor driver circuits
Printer hammer driver circuits
Low-frequency amplification

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or R) required for your application against the datasheet specifications. Confirm that the MT-3-A1 package dimensions align with your PCB layout constraints. Ensure compliance with standard application guidelines as specialized uses require direct consultation with sales staff.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is needed for driving loads such as motors or printer mechanisms. The high hFE simplifies base drive requirements by removing the need for additional shunt resistors. Consider the 1 A continuous current limit and 1.5 W power dissipation capability relative to your thermal management strategy.

Single Bipolar Transistors Part Context

This part belongs to the category of discrete semiconductor transistors manufactured by Panasonic Electronic Components. It utilizes a triple diffusion planar technology to achieve stable performance in low-frequency applications. The device is distinct from general-purpose small-signal transistors due to its Darlington configuration and high current handling capabilities.