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Product Detailed Parameters
- Description：TRANS NPN 150V 0.05A SSMINI3-F1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 3mA, 30mA
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 10mA, 5V
- Power - Max：125 mW
- Frequency - Transition：150MHz
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F1
- Grade：-
- Qualification：-
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Overview
The Panasonic 2SD2240J is a silicon NPN epitaxial planar transistor designed for high breakdown voltage low-noise amplification. It features a collector-emitter voltage of 150 V, a collector current of 50 mA, and a collector power dissipation of 125 mW. The device provides a forward current transfer ratio (hFE) ranging from 130 to 330 and a transition frequency of 150 MHz. Packaged in the SSMini3-F1 format, it serves as the complementary component to the 2SB1463J.
Feature Summary
- High collector-emitter voltage capability
- Low noise voltage characteristics
- SS-Mini type package for downsizing
Applications
- High breakdown voltage low-noise amplification
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
Procurement Notes
Verify the specific suffix J against official documentation to confirm pinout and marking symbol P. Confirm RoHS compliance status with the manufacturer before procurement. Check the latest product lifecycle stage on the official website to ensure availability and avoid obsolete components.
Selection Notes
Select this component for applications requiring high voltage handling combined with low noise performance. Ensure the design accommodates the 125 mW power dissipation limit at elevated temperatures. Verify that the SSMini3-F1 package dimensions fit the target PCB layout constraints.
Part Context
This part belongs to the Panasonic discrete semiconductor transistor category. It is specifically engineered for low-frequency audio or signal amplification where high voltage isolation and minimal noise are critical requirements.
Replacement Considerations
The datasheet identifies the 2SB1463J as the complementary PNP transistor for this series. No direct substitute part numbers are listed in the provided documentation.
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 150 V.
Is this component RoHS compliant?
Yes, the product complies with the RoHS Directive (EU 2002/95/EC).
What is the transition frequency?
The transition frequency (fT) is 150 MHz.
