2SD2318TLV

Overview

The 2SD2318TLV is a single NPN bipolar junction transistor manufactured by Rohm Semiconductor, housed in the CPT3 surface-mount package. It supports a collector-emitter voltage of 60 V and a continuous collector current of 3 A. The device features a transition frequency of 50 MHz and a maximum power dissipation of 15 W at 25°C case temperature. DC current gain ranges from 560 to 1800 under specified conditions.

Feature Summary

• High DC current gain for efficient signal amplification
• Low saturation voltage to minimize power loss during conduction

Applications

• General-purpose power switching circuits
• Audio amplifier output stages
• Driver transistors in control systems

Procurement Notes

Verify component authenticity through authorized distributors. Confirm RoHS3 compliance and MSL rating prior to integration. Check datasheet revisions for updated electrical limits. Ensure storage conditions remain within specified temperature ranges to maintain reliability.

Selection Notes

Select this component for applications requiring high current handling with moderate voltage ratings. Compare hFE requirements against load specifications. Evaluate thermal management needs given the 15 W dissipation limit. Consider complementary PNP devices for push-pull configurations.

Part Context

This part belongs to the 2SD2318 series of high-current gain power transistors. It is designed as a complement to the 2SB1639 PNP counterpart. The CPT3 package provides robust thermal performance for surface-mount assembly processes.

Replacement Considerations

The 2SCR587D3 is listed as a similar level replacement with the same package type.