2SD2337C-E

2SD2337C-E

$1.37
  • Description:TRANS NPN 150V 2A TO-220FM
  • Series:-

SKU:b77e9863dba1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 150V 2A TO-220FM
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FM
  • Grade:-
  • Qualification:-

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2SD2337C-E

Overview

The Renesas 2SD2337C-E is a single NPN bipolar junction transistor (BJT) designed for power switching applications. It features a maximum collector-emitter voltage of 150 V and a continuous collector current rating of 2 A. The device is housed in a TO-220FM through-hole package, which facilitates effective thermal management. With a total power dissipation capacity of 1.5 W, this component is suitable for circuits requiring robust voltage handling and moderate current control.

Feature Summary

  • NPN silicon structure optimized for general-purpose power switching
  • High voltage tolerance up to 150 V for demanding circuit environments
  • Through-hole TO-220FM package design for reliable mounting and heat dissipation

Applications

  • General-purpose power switching circuits
  • Low-to-medium power amplifier stages
  • Industrial control system output drivers

Procurement Notes

Verify the specific suffix 'E' against the manufacturer's official documentation to ensure compliance with RoHS directives and material composition requirements. Confirm that the TO-220FM package variant matches the thermal and mechanical specifications required for the target PCB layout. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when an NPN transistor with 150 V breakdown voltage and 2 A current capability is required. The TO-220FM package is appropriate for applications where through-hole mounting is preferred for mechanical stability. Ensure the thermal resistance characteristics align with the expected power dissipation levels in the specific application environment.

Part Context

This component belongs to the Renesas Electronics Corporation lineup of discrete bipolar transistors. It serves as a fundamental active element in electronic circuits, providing signal amplification or switching functionality. The 2SD2337C-E represents a standard power transistor configuration widely utilized in industrial and consumer electronics hardware designs.

Replacement Considerations

Consult official substitution guides for compatible NPN power transistors with matching voltage and current ratings. Verify pinout compatibility and thermal performance equivalence before implementing any alternative components in existing designs.

2SD2337C-E2SD2337C-E
$1.37
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