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The Panasonic 2SD2345GSL is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 400 to 2,000 depending on the rank, and a low collector-emitter saturation voltage of 0.20 V maximum at specified currents. The device supports a collector current of 50 mA with a peak rating of 100 mA, while maintaining a collector-emitter breakdown voltage of 40 V and an emitter-base voltage of 15 V. Transition frequency reaches 120 MHz, and it operates within a junction temperature range up to 125 °C.
Verify the specific ordering suffix against official Panasonic documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and check the manufacturer's lifecycle page for maintenance or discontinuation notices before finalizing procurement plans.
Select this component when low-frequency signal amplification requires high gain and low saturation voltage. Ensure the application stays within the 50 mA continuous collector current limit and 40 V collector-emitter voltage rating. Consider the SSMini3-F3 package dimensions for board layout constraints.
This part belongs to the Panasonic 2SD series of small-signal bipolar transistors. It utilizes a silicon NPN epitaxial planar structure housed in an SSMini3-F3 surface-mount package. The device is compliant with the EU RoHS Directive and is intended for standard commercial applications rather than specialized automotive or aerospace environments.
Consult official Panasonic documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical ratings, and package dimensions.