2SD23750P

2SD23750P

  • Description:TRANS NPN 60V 3A TO-220D-A1
  • Series:-

SKU:1e780a806784 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 60V 3A TO-220D-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:800 @ 500mA, 4V
  • Power - Max:2 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220D-A1
  • Grade:-
  • Qualification:-

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2SD23750P

Overview

The Panasonic 2SD2375 is a silicon NPN triple diffusion planar power transistor designed for high forward current transfer ratio applications. It features a TO-220D-A1 package suitable for heat sink mounting. Key electrical ratings include a collector-emitter voltage of 60 V, a collector-base voltage of 80 V, and a continuous collector current of 3 A. The device dissipates up to 25 W at 25°C case temperature. Minimum DC current gain (hFE) ranges from 500 to 800 depending on the rank, with a transition frequency of 50 MHz.

Feature Summary

  • High forward current transfer ratio (hFE) with satisfactory linearity
  • Full-pack package design allowing installation to a heat sink with one screw

Applications

  • Power amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact hFE ranking or packaging variations. Confirm compliance status and lifecycle stage via manufacturer resources before procurement. Ensure thermal management requirements align with the specified absolute maximum ratings during system integration.

Selection Notes

Select this component for designs requiring high current gain and linear power amplification characteristics. Evaluate the thermal resistance and ensure adequate heat sinking to maintain junction temperatures within limits. Consider the 60 V collector-emitter rating when designing for appropriate voltage margins in the target application circuit.

Part Context

This part belongs to the Panasonic 2SD series of discrete semiconductor transistors. It utilizes a triple diffusion planar process technology optimized for power handling capabilities. The component is manufactured by Panasonic Electronic Components and falls under the category of general-purpose power transistors intended for standard commercial electronics.

Replacement Considerations

Consult official replacement lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution.

FAQ

What is the minimum guaranteed DC current gain (hFE) for the 2SD2375?

The minimum hFE is 500 for Rank Q and 800 for Rank P, measured at IC = 0.5 A and VCE = 4 V.

How is the 2SD2375 package mounted?

It uses a full-pack package that can be installed directly onto a heat sink using a single screw.

What is the peak collector current rating?

The peak collector current (ICP) is rated at 6 A.

2SD23750P2SD23750P

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