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The Panasonic 2SD2375 is a silicon NPN triple diffusion planar power transistor designed for high forward current transfer ratio applications. It features a TO-220D-A1 package suitable for heat sink mounting. Key electrical ratings include a collector-emitter voltage of 60 V, a collector-base voltage of 80 V, and a continuous collector current of 3 A. The device dissipates up to 25 W at 25°C case temperature. Minimum DC current gain (hFE) ranges from 500 to 800 depending on the rank, with a transition frequency of 50 MHz.
Verify the specific ordering suffix against official documentation to confirm exact hFE ranking or packaging variations. Confirm compliance status and lifecycle stage via manufacturer resources before procurement. Ensure thermal management requirements align with the specified absolute maximum ratings during system integration.
Select this component for designs requiring high current gain and linear power amplification characteristics. Evaluate the thermal resistance and ensure adequate heat sinking to maintain junction temperatures within limits. Consider the 60 V collector-emitter rating when designing for appropriate voltage margins in the target application circuit.
This part belongs to the Panasonic 2SD series of discrete semiconductor transistors. It utilizes a triple diffusion planar process technology optimized for power handling capabilities. The component is manufactured by Panasonic Electronic Components and falls under the category of general-purpose power transistors intended for standard commercial electronics.
Consult official replacement lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution.
The minimum hFE is 500 for Rank Q and 800 for Rank P, measured at IC = 0.5 A and VCE = 4 V.
It uses a full-pack package that can be installed directly onto a heat sink using a single screw.
The peak collector current (ICP) is rated at 6 A.