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The Panasonic 2SD2420AP is a silicon NPN triple diffusion planar type Darlington power transistor designed for power amplification applications. It operates in a TO-220D-A1 package with the collector connected to the case. The device supports a maximum collector current of 4A and peak currents up to 8A, with a collector power dissipation rating of 30W at 25°C. The 2SD2420 variant provides a collector-emitter voltage of 60V, while the 2SD2420A variant offers an increased breakdown voltage of 80V. Both versions feature high forward current transfer ratios, with hFE values reaching up to 10,000 under specific conditions.
Verify the exact suffix against the official Panasonic datasheet to confirm the collector-emitter voltage rating, as the 'A' designation indicates an 80V rating compared to the standard 60V version. Confirm RoHS compliance status and check the manufacturer's lifecycle page for maintenance or discontinuation notices before finalizing procurement plans.
Select the 2SD2420A variant when circuit designs require a higher collector-emitter breakdown voltage of 80V. Ensure thermal management solutions can handle the 30W power dissipation rating at 25°C ambient temperature. Verify that the required hFE rank meets the minimum gain specifications for the intended amplifier stage.
This component belongs to the Panasonic 2SD2420 series of silicon NPN Darlington transistors. It is electrically complementary to the PNP counterpart models 2SB1623 and 2SB1623A. The series utilizes a triple diffusion planar process technology optimized for robust power handling capabilities within a standard TO-220D-A1 plastic package.
Public confirmed substitute part numbers are not available in the provided documentation.