2SD24790RA

2SD24790RA

  • Description:TRANS NPN DARL 100V 2A MT-3-A1
  • Series:-

SKU:bb3555581ad8 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN DARL 100V 2A MT-3-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8000 @ 1A, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-3-A1
  • Grade:-
  • Qualification:-

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2SD24790RA

Overview

The Panasonic 2SD2479 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank. The device supports a collector current of 2A and peak current of 3A with a power dissipation of 1.5W at 25°C. Key electrical limits include a collector-emitter voltage of 100V and a transition frequency of 150MHz. It utilizes an MT-3-A1 radial package.

Feature Summary

  • High forward current transfer ratio suitable for sensitive amplification stages
  • Radial taping supply option available for automated assembly

Applications

  • Low-frequency amplification circuits
  • General electronic equipment
  • Household appliances
  • Measuring instruments

Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your circuit design against the datasheet specifications. Confirm the component lifecycle status as maintenance or discontinued information may change; consult official manufacturer channels for current availability and lead times before finalizing procurement plans.

Selection Notes

Select this component when a high gain NPN transistor is needed for low-frequency applications. Ensure the operating environment stays within the specified junction temperature range of -55°C to +150°C. Verify that the 1.5W power dissipation rating is sufficient for your thermal management strategy without exceeding absolute maximum ratings.

Part Context

This part belongs to the Panasonic silicon NPN epitaxial planar transistor family. It is housed in an MT-3-A1 package, which is a radial leaded configuration. The device is compliant with the RoHS Directive (EU 2002/95/EC). It is intended for standard applications rather than specialized automotive or aerospace uses requiring exceptional reliability.

Replacement Considerations

Consult the official Panasonic semiconductor website for the most up-to-date product standards and potential replacement recommendations. No direct substitute part numbers are listed in the provided documentation.

2SD24790RA2SD24790RA

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