SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic 2SD2479 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank. The device supports a collector current of 2A and peak current of 3A with a power dissipation of 1.5W at 25°C. Key electrical limits include a collector-emitter voltage of 100V and a transition frequency of 150MHz. It utilizes an MT-3-A1 radial package.
Verify the specific hFE rank (Q, R, or S) required for your circuit design against the datasheet specifications. Confirm the component lifecycle status as maintenance or discontinued information may change; consult official manufacturer channels for current availability and lead times before finalizing procurement plans.
Select this component when a high gain NPN transistor is needed for low-frequency applications. Ensure the operating environment stays within the specified junction temperature range of -55°C to +150°C. Verify that the 1.5W power dissipation rating is sufficient for your thermal management strategy without exceeding absolute maximum ratings.
This part belongs to the Panasonic silicon NPN epitaxial planar transistor family. It is housed in an MT-3-A1 package, which is a radial leaded configuration. The device is compliant with the RoHS Directive (EU 2002/95/EC). It is intended for standard applications rather than specialized automotive or aerospace uses requiring exceptional reliability.
Consult the official Panasonic semiconductor website for the most up-to-date product standards and potential replacement recommendations. No direct substitute part numbers are listed in the provided documentation.