2SD256500A

Overview

The Panasonic 2SD2565 is a silicon NPN triple diffusion planar type transistor designed for high voltage-withstand switching applications. It features a collector-base voltage of 400 V and a collector-emitter voltage of 400 V, with a maximum collector current of 0.5 A and peak collector current of 1 A. The device offers a collector power dissipation of 1 W at 25°C ambient temperature and a junction temperature rating up to 150°C. Electrical characteristics include a forward current transfer ratio (hFE) of 30 at IC = 30 mA, a collector-emitter saturation voltage of 1.5 V max at IC = 250 mA, and a transition frequency of 30 MHz.

Feature Summary

• High collector-base and collector-emitter voltage withstand capability rated at 400 V
• Triple diffusion planar construction optimized for high voltage switching performance
• M type package design facilitating both automatic and manual insertion as well as stand-alone fixing

Applications

• General electronic equipment requiring high voltage switching
• Office equipment and measuring instruments
• Communications equipment circuits

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates this component falls under maintenance or discontinued categories. Confirm that the M type package dimensions align with existing PCB footprints. Ensure compliance with RoHS Directive requirements if applicable to the target assembly. Consult official manufacturer channels for the most recent product standards and availability updates prior to finalizing orders.

Selection Notes

Select this component when circuit designs require an NPN transistor capable of handling 400 V collector-emitter voltages with moderate current levels up to 0.5 A. The low saturation voltage aids in efficiency during switching operations. Consider the thermal constraints carefully, as power dissipation is limited to 1 W without significant heatsinking. Verify that the required switching speed meets the application's transition frequency needs.

Part Context

This part belongs to Panasonic's lineup of silicon NPN transistors utilizing triple diffusion planar technology. It is specifically engineered for robustness in high voltage environments compared to standard low-voltage counterparts. The M type package provides mechanical stability for direct board mounting, distinguishing it from standard through-hole variants used in lower-power general-purpose applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.