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The Panasonic 2SD2621 is a silicon NPN epitaxial planar transistor designed for low-frequency driver amplification. It operates within a collector-emitter voltage of 100 V and a collector current of 20 mA, with a maximum power dissipation of 100 mW at 25°C ambient temperature. The device features a high forward current transfer ratio (hFE) ranging from 400 to 1200 under standard test conditions. Electrical characteristics include a transition frequency of 200 MHz and a low collector-emitter saturation voltage of 0.20 V maximum. It utilizes the SSSmini3-F1 surface-mount package.
Verify component authenticity through authorized distribution channels. Confirm compliance with RoHS Directive standards during procurement. Review official documentation for lifecycle status updates regarding maintenance or discontinuation phases before finalizing orders.
Select this component for applications requiring small-signal amplification with high gain characteristics. Ensure operating parameters remain within the specified absolute maximum ratings to prevent device failure. Consider the thermal derating curves when designing for elevated ambient temperatures.
This component belongs to the category of discrete semiconductor transistors manufactured by Panasonic Electronic Components. It serves as a general-purpose NPN transistor intended for standard commercial electronics rather than specialized industrial or automotive environments.
Consult official manufacturer resources for verified substitute part numbers. Cross-referencing requires matching electrical specifications and physical package dimensions to ensure functional compatibility in existing designs.