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The 2SD2652T106 is a silicon NPN epitaxial planar bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in the UMT3 (SOT-323) surface-mount package. The device supports a maximum collector current of 1.5 A and a collector-emitter voltage of 12 V. Key electrical characteristics include a low collector saturation voltage of 200 mV at 500 mA and a transition frequency of 150 MHz. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW of power.
Verify the specific suffix T106 corresponds to the UMT3 tape-and-reel packaging configuration. Confirm AEC-Q101 automotive qualification status if required for your application. Check RoHS compliance documentation for environmental regulations. Ensure the ordering code matches the exact voltage and current ratings specified in the official datasheet.
Select this component when a compact SOT-323 footprint is required alongside high current handling capabilities. The low saturation voltage makes it suitable for battery-powered or efficiency-sensitive designs. Compare against standard small-signal transistors if higher current than 100 mA is needed. Consider thermal management constraints due to the small package size and 200 mW power dissipation limit.
This part belongs to ROHM's 2SD series of NPN transistors designed for general-purpose use. The 2SD2652 variant specifically targets applications needing 12V operation and 1.5A current capacity. It complements complementary PNP devices like the 2SB1709 in push-pull configurations. The T106 suffix indicates the specific taping specification for automated assembly.
Publicly confirmed substitute part numbers are not available in the provided source material.