2SD2657TL

$0.62

Description：TRANS NPN 30V 1.5A TSMT3
Series：-

SKU:413cd95c370f Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 1.5A TSMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：350mV @ 50mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 100mA, 2V
Power - Max：1 W
Frequency - Transition：300MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-96
Supplier Device Package：TSMT3
Grade：-
Qualification：-

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2SD2657TL

Overview

The 2SD2657TL is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 30 V and a maximum DC collector current of 1.5 A. The device operates with a power dissipation rating of 0.5 W and offers a DC current gain (hFE) range of 270 to 680. Designed for surface mount applications, it utilizes the TSMT3 package, equivalent to SOT-346T, with dimensions of 2.8 x 2.9 mm. The component supports a maximum junction temperature of +150°C and complies with RoHS standards.

Feature Summary

Low saturation voltage characteristics for efficient switching performance
High DC current gain ranging from 270 to 680 for sensitive drive applications
Compact TSMT3 surface-mount package suitable for space-constrained designs

Applications

Low frequency amplifier circuits
General-purpose driver stages
Switching applications requiring low saturation voltage

Procurement Notes

Verify the supply status before design finalization, as this component is designated for existing customers only and is not recommended for new designs. Confirm that the TSMT3 package dimensions and pinout align with your PCB footprint requirements. Ensure thermal management strategies account for the 0.5 W power dissipation limit in your specific enclosure environment.

Selection Notes

Select this component when a compact NPN transistor with high current gain and low saturation voltage is required for legacy or maintenance projects. The 30 V rating suits low-voltage logic interfaces. Consider alternative active components if initiating a new product design due to the non-recommended-for-new-designs status.

Part Context

This part belongs to ROHM's low VCE(sat) transistor series, optimized for driving loads with minimal voltage drop. The TSMT3 package provides a small form factor compared to traditional through-hole options. It serves as a successor or alternative to older discrete transistor families in consumer electronics and industrial control modules.