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Product Detailed Parameters
- Description：TRANS NPN 30V 3A TSMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 200mA, 2V
- Power - Max：1 W
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-96
- Supplier Device Package：TSMT3
- Grade：-
- Qualification：-
Download product information
Overview
The ROHM Semiconductor 2SD2673TL is a silicon NPN bipolar junction transistor designed for surface-mount applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 30 V. The device operates within a junction temperature range up to +150°C and offers a power dissipation capacity of 1 W. Key electrical characteristics include a DC current gain (hFE) ranging from 270 to 680 at 200 mA, a transition frequency (fT) of 200 MHz, and a low collector-emitter saturation voltage of 250 mV. It is housed in an SOT-346T-3 package.
Feature Summary
- High current handling capability with a 3 A maximum collector current rating
- Low saturation voltage for efficient switching performance
- Wide operating temperature range supporting high thermal stability
Applications
- General-purpose amplification circuits
- Switching applications requiring moderate current drive
- Low-frequency amplifier stages
Procurement Notes
Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and ensure the component matches the required SOT-346T-3 footprint. Cross-reference the part number with official ROHM documentation to validate availability and technical specifications.
Selection Notes
Select this component for designs requiring a compact NPN transistor with high current gain and robust thermal performance. Ensure the circuit voltage does not exceed the 30 V collector-emitter limit. Consider the 1 W power dissipation rating and implement appropriate thermal management for continuous operation near maximum ratings.
Part Context
The 2SD2673TL belongs to the 2SD2673 series of small-signal transistors manufactured by ROHM Semiconductor. This series is engineered for surface-mount technology, providing a balance of high gain and low saturation voltage. The device utilizes silicon technology and is optimized for general-purpose electronic applications requiring reliable switching and amplification.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on pinout, voltage ratings, and current capabilities using official cross-reference data.
