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The 2SD2674TL is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in the SOT-346T surface-mount package and designed for low collector-emitter saturation voltage applications. Key electrical parameters include a maximum collector current of 1.5 A, a collector-emitter breakdown voltage of 12 V, and a collector-base voltage of 15 V. The device features an emitter-base voltage rating of 6 V, a power dissipation capacity of 1 W, and a gain-bandwidth product of 400 MHz. DC current gain ranges from 270 to 680 at specified test conditions.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the received part matches the exact model designation and packaging specifications. Check for any design diversion notices or obsolescence warnings provided by the manufacturer prior to procurement. Ensure compliance with RoHS directives if required for your specific application environment.
Select this component when a low saturation voltage and high-speed switching capability are required within a 12 V system. The 1.5 A current rating supports moderate load requirements. Consider the SOT-346T package dimensions for PCB layout constraints. Evaluate thermal management needs given the 1 W power dissipation limit under operating conditions.
This component belongs to the ROHM semiconductor transistor family, specifically categorized as a small-signal bipolar junction transistor. It utilizes silicon technology for reliable operation. The device is intended for surface-mount assembly, aligning with modern electronics manufacturing standards for compact and automated production environments.
ROHM indicates this product cannot be used for new designs due to design diversion status. Existing designs should evaluate alternative components from the same manufacturer or other suppliers that offer equivalent electrical characteristics and pin compatibility.