2SD2707T2LV

Overview

The 2SD2707T2LV is an NPN silicon general-purpose bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 50V and a continuous collector current of 150mA. The device features a high DC current gain ranging from 820 to 2700 at 1mA, ensuring efficient signal amplification. It maintains a low saturation voltage of 300mV maximum under specified conditions. The component utilizes the VMT3 (SOT-723) surface-mount package and supports a transition frequency of 250MHz.

Feature Summary

• High DC current gain for effective low-frequency amplification
• Low collector-emitter saturation voltage for reduced power loss
• Enhanced emitter-base breakdown voltage tolerance

Applications

• Low frequency amplifier circuits
• General purpose driver applications

Procurement Notes

Verify the specific ordering suffix T2L corresponds to the required taping specifications and reel size before procurement. Confirm that the VMT3 package dimensions align with the target PCB footprint. Ensure storage conditions remain within recommended limits to maintain solderability prior to assembly.

Selection Notes

Select this component when high current gain is required for small-signal amplification tasks. The VMT3 package is suitable for space-constrained surface-mount designs. Verify that the 50V collector-emitter rating meets the circuit's maximum operating voltage requirements.

Part Context

This part belongs to the 2SD2707 series of general-purpose NPN transistors. It is designed for standard electronic equipment applications such as audio, office automation, and telecommunications. The device is constructed using silicon technology and complies with RoHS directives.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters and physical package dimensions.