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The 2SD467CTZ-E is a single NPN bipolar junction transistor (BJT) manufactured by Renesas Electronics Corporation. It is designed for general-purpose switching and amplification applications. The device features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 80 V. Key electrical parameters include a transition frequency of 150 MHz, a DC current gain of at least 800 at 150 mA and 5 V, and a maximum power dissipation of 1 W. The component operates within a junction temperature range up to 150 °C and is housed in a TO-92MOD through-hole package.
Verify the specific manufacturer datasheet for the 2SD467CTZ-E to confirm exact pinout configurations and absolute maximum ratings before integration. Ensure compliance with relevant environmental directives such as RoHS status applicable to the specific production batch. Cross-reference ordering information directly with Renesas Electronics or authorized distributors to validate part authenticity and availability.
Select this component when a standard NPN transistor with high current gain and moderate voltage ratings is required. The 150 MHz transition frequency makes it suitable for audio and intermediate frequency applications. Consider the TO-92MOD package constraints for thermal management and board space. Compare against similar NPN transistors if higher current or different voltage thresholds are needed.
This component belongs to the family of discrete semiconductor transistors produced by Renesas Electronics. It utilizes the TO-92MOD form factor, which is a common through-hole package for small-signal and medium-power applications. The device serves as a fundamental building block in analog and digital circuit designs, providing reliable switching and amplification functions.
Consult official Renesas documentation for confirmed substitute part numbers. Verify that any alternative component matches the NPN polarity, 80 V voltage rating, 1 A current capacity, and TO-92MOD package type.