2SD468-B-AP

2SD468-B-AP

  • Description:TRANS NPN 20V 1A TO-92
  • Series:-

SKU:436bc7273efd Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 20V 1A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:190MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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2SD468-B-AP

Overview

The 2SD468-B-AP is an NPN epitaxial silicon transistor designed for low frequency power amplifier applications. It features a maximum collector-emitter voltage of 20 V and a continuous collector current rating of 1.0 A. The device offers a DC current gain (hFE) range of 85 to 240, with a typical current gain bandwidth product of 190 MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92L package.

Feature Summary

  • Designed specifically for low frequency power amplifier circuits
  • Complements the 2SB562 PNP transistor as a matched pair
  • Utilizes molded plastic case material with UL flammability classification 94V-0

Applications

  • Low frequency power amplification stages
  • General purpose switching applications
  • Audio signal processing circuits

Procurement Notes

Verify that the ordering suffix matches the required packaging configuration. The AP suffix indicates ammo packing containing 2,000 pieces per box. Ensure compliance with RoHS standards if lead-free finish is required by adding the designated suffix. Confirm component authenticity through authorized distribution channels to mitigate counterfeiting risks.

Selection Notes

Select this component when a single NPN silicon transistor with a 20 V collector-emitter breakdown voltage is required. The device supports up to 1.0 A of continuous collector current. Verify that the hFE classification meets the specific circuit requirements, as options exist for different gain ranges. Ensure the thermal management design accommodates the specified junction temperature limits.

Part Context

This component belongs to the 2SD468 series manufactured by Micro Commercial Components. It serves as the NPN counterpart in a complementary pair with the 2SB562 PNP transistor. The series is engineered for robust performance in low frequency power amplifier environments, providing reliable operation across standard industrial temperature ranges.

Replacement Considerations

The 2SB562 is documented as the complementary pair for this component. Direct substitutes are not explicitly listed in the provided datasheet; verify pinout compatibility and electrical ratings before considering alternative manufacturers.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 20 V.

Does this component come in a lead-free version?

Yes, the datasheet notes that a 'P' suffix designates a RoHS compliant and lead-free finish.

What is the typical current gain bandwidth product?

The typical current gain bandwidth product (fT) is 190 MHz under specified test conditions.

2SD468-B-AP2SD468-B-AP

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