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The 2SD468-C-AP is an NPN epitaxial silicon transistor designed for low frequency power amplifier applications. It features a collector-emitter voltage of 20 V, a collector current rating of 1.0 A, and a collector power dissipation of 0.9 W. The device utilizes a TO-92L package with straight or bent leads in bulk or ammo packing configurations. The 'C' suffix indicates a DC current gain (hFE) classification range of 120 to 240 at IC=500mA and VCE=2V. The component operates within a junction temperature range of -55°C to +150°C.
Verify that the ordering suffix matches the required packaging configuration, as the AP designation specifies Ammo Packing containing 2Kpcs per box. Confirm the C suffix aligns with the necessary hFE binning requirements for the specific circuit design. Ensure compliance with RoHS standards if environmental regulations apply to the final assembly process.
Select this component when a low frequency power amplifier requires an NPN transistor with a 20V collector-emitter voltage and 1A continuous current capability. The TO-92L package suits through-hole mounting constraints. Verify that the 120 to 240 hFE range meets the biasing requirements of the target application circuit.
This part belongs to the 2SD468 series of NPN epitaxial silicon transistors manufactured by Micro Commercial Components. The series is characterized by its utility in low frequency power amplifier designs and its pairing with the complementary 2SB562 PNP transistor. The product line offers various packaging options including bulk and ammo boxes.
The datasheet identifies the 2SB562 as the complementary pair. No direct substitute part numbers are documented in the provided source material.
The 'C' suffix denotes a DC current gain (hFE) classification range of 120 to 240, measured at IC=500mAdc and VCE=2.0Vdc.
No, the datasheet explicitly categorizes the 2SD468 as a Low Frequency Power Amplifier.
The maximum collector power dissipation is rated at 0.9 W under standard operating conditions.